ds21209 rev. g-2 1 of 2 gbpc25005/w - gbpc2510/w www.diodes.com diodes incorporated gbpc25005/w - gbpc2510/w 25a glass passivated bridge rectifier features gbpc-w c a g e b h (ac) (ac) (+) (-) h j a c k a m b h h l p a p (ac) (ac) (-) (+) gbpc ?w? suffix designates wire leads no suffix designates faston terminals gbpc / gbpc-w dim min max a 28.30 28.80 b 7.40 8.25 c 16.10 17.10 e 18.80 21.30 g 13.80 14.80 h hole for #10 screw 5.08 5.59 j 17.60 18.60 k 10.90 11.90 l 0.97 1.07 m 31.80 p 17.60 18.60 all dimensions in mm mechanical data glass passivated die construction diffused junction low reverse leakage current low power loss, high efficiency surge overload rating to 300a peak electrically isolated metal base for maximum heat dissipation case to terminal isolation voltage 1500v ul listed under recognized component index, file number e94661 case: molded plastic with heatsink internally mounted in the bridge encapsulation terminals: plated leads solderable per mil-std-202, method 208 polarity: as marked on case mounting: through hole for #10 screw mounting torque: 8.0 inch-pounds maximum gbpc weight: 20 grams (approx.) gbpc-w weight: 14 grams (approx.) mounting position: any marking: type number maximum ratings and electrical characteristics @ t a = 25 c unless otherwise specified single phase, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. characteristic symbol gbpc25 005/w gbpc25 01/w gbpc25 02/w gbpc25 04/w gbpc25 06/w gbpc25 08/w gbpc25 10/w unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 50 100 200 400 600 800 1000 v rms reverse voltage v r(rms) 35 70 140 280 420 560 700 v average rectified output current @ t c = 60 c i o 25 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 300 a forward voltage (per element) @ i f = 12.5a v fm 1.1 v peak reverse current @ t c = 25 c at rated dc blocking voltage @ t c = 125 c i r 5.0 500 a i 2 t rating for fusing (note 1) i 2 t 374 a 2 s typical junction capacitance (note 2) c j 300 pf typical thermal resistance per leg (note 3) r jc 1.3 c/w operating and storage temperature range t j, t stg -65 to +150 c notes: 1. non-repetitive, for t > 1.0ms and t < 8.3ms. 2. measured at 1.0mhz and applied reverse voltage of 4.0v dc. 3. thermal resistance junction to case mounted on heatsink.
ds21209 rev. g-2 2 of 2 gbpc25005/w - gbpc2510/w www.diodes.com 0.01 0.1 1.0 10 100 0 0.4 0.8 1.0 1.6 1.8 0.6 0.2 1.2 1.4 i , instantaneous forward current (a) f v , instantaneous forward voltage (v) f fi g . 2 t y pical forward characteristics ( per element ) t = 25c j pulse width = 300s 0 100 200 300 4 00 110100 i , peak fwd. surge current (a) fsm number of cycles at 60 hz fi g . 3 max non-repetitive sur g e current single half-sine wave (jedec method) t = 150c j 10 100 1000 0.1 1.0 10 100 c , capacitance (pf) j v , reverse voltage (v) r fi g .4 t y pical junction capacitance ( per element ) f = 1 mhz t = 25c j 0.01 0.1 1.0 10 100 40 20 60 80 100 120 140 i , instantaneous reverse current (a) r percent of rated peak reverse voltage (%) fi g .5 t y pical reverse characteristics ( per element ) t = 125c j t = 130c j t = 25c j 50v - 400v 600v - 1000v 0 10 20 0 25 50 75 100 125 150 i , average forward current (a) f t , case temperature ( c) c fi g . 1 forward current deratin g curve resistive or inductive load mounted on a 220 x 220 x 50 mm al plate heatsink 30 4 0
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